Notice2026-15937
Foreign-Trade Zone (FTZ) 18, Notification of Proposed Production Activity; Western Digital Technologies, Inc.; (Semiconductor Die); San Jose and Fremont California
Primary source
Metadata and text below are from the Federal Register, a public-domain U.S. government work. Always verify the official published version before relying on it for any legal matter.
Published
August 6, 2026
Issuing agencies
Commerce DepartmentForeign-Trade Zones Board
Full Text
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<title>Federal Register, Volume 91 Issue 150 (Thursday, August 6, 2026)</title>
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[Federal Register Volume 91, Number 150 (Thursday, August 6, 2026)]
[Notices]
[Pages 50752-50753]
From the Federal Register Online via the Government Publishing Office [<a href="http://www.gpo.gov">www.gpo.gov</a>]
[FR Doc No: 2026-15937]
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DEPARTMENT OF COMMERCE
Foreign-Trade Zones Board
[B-96-2026]
Foreign-Trade Zone (FTZ) 18, Notification of Proposed Production
Activity; Western Digital Technologies, Inc.; (Semiconductor Die); San
Jose and Fremont California
Western Digital Technologies, Inc. submitted a notification of
proposed production activity to the FTZ Board (the Board) for its
facilities in San Jose and Fremont, California within Subzone 18V. The
notification conforming to the requirements of the Board's regulations
(15 CFR 400.22) was received on July 29, 2026.
Pursuant to 15 CFR 400.14(b), FTZ production activity would be
limited to the specific foreign-status material(s)/component(s) and
specific finished product(s) described in the submitted notification
(summarized below) and subsequently authorized by the Board. The
benefits that may stem from conducting production activity under FTZ
procedures are explained in the background section of the Board's
website--accessible via <a href="http://www.trade.gov/ftz">www.trade.gov/ftz</a>.
The proposed finished product is Die for Hard Disk Drive Head
(duty-free).
The proposed foreign-status materials/components include: Single or
multiple metal alloy sputtering targets containing at least one of the
following metals: Ru, Al, Cr, Co, Ir, B, Fe, Ni, Hf, Ti, Pt, Ag, Mg,
Ta, Ge, Mn, Mo, Zr, W, Y, Pd, Nb, Au, Rh, Sm; Undercoated .55-1.55um
Alumina Substrates; EMD Performance Materials Corp AZ 10XT (100CP)
Photoresist; EMD Performance Materials Corp AZ 10XT (50cP) Photoresist;
EMD Performance Materials Corp AZ 10XT Photoresist (520cP) Photoresist;
EMD Performance Materials Corp AZ 1529 Photoresist; EMD Performance
Materials Corp AZ 50XT Photoresist; EMD Performance Materials Corp AZ
9220 Photoresist (50CPS) Photoresist; EMD Performance Materials Corp AZ
9260 PHOTORESIST (520 CPS) Photoresist; EMD Performance Materials Corp
AZ 7905 MIF Photoresist; EMD Performance Materials Corp AZ nLOF 2035
Photoresist; EMD Performance Materials Corp AZ P4110 Photoresist; EMD
Performance Materials Corp AZ P4330-RS Photoresist; Dupont AR 602-510
Photoresist; JSR Micro, Inc. JSR ARF AR1891JN-30 Photoresist; JSR
Micro, Inc. JSR ARF ARX3001JN-15 Photoresist; JSR Micro Inc. JSR ARF
ARX3001JN-9Photoresist; JSR Micro, Inc. JSR NFC900 Photoresist;
Fujifilm Electronic Materials LLCGKR-4602PP Photoresist; Rohm and Haas
Electronic Materials LLC Microposit LOL 1000 Lift Off Layer Adhesion
Promoting (PR1); Rohm and Haas Electronic Materials LLC Microposit LOL
1100 Lift Off Layer Adhesion Promoting (PR1); Rohm and Haas Electronic
Materials LLC Microposit LOL 2000 Lift Off Layer Adhesion Promoting
(PR1); Dow Megaposit SPR 955CM-1.4Photoresist; Kayaku Advanced
Materials PMGI XS2Adhesion Promoting (PR1); Shin-Etsu Chemical Co.,
Ltd. SAIL X311 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I032-3.5
Photoresist; Shin-Etsu Chemical Co., Inc.SEPR-I036-4.0 Photoresist;
Shin-Etsu Chemical Co., Ltd.SEPR-I036N-0.8Photoresist; Shin-Etsu
Chemical Co., Ltd.SEPR-I036N-4.0 Photoresist; Shin-Etsu Chemical Co.,
Ltd.SEPR-I036NE-4.0 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I051-
1.5 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I051N-1.5
Photoresist; Shin-Etsu MicroSi, Inc. SEPR-I032N-1.5 Photoresist; Shin-
Etsu Chemical Co., Ltd.SIHM-A940-38 Photoresist; Shin-Etsu Chemical
Co., Ltd.SEPR-I302N-1.5 Photoresist; Shin-Etsu Chemical Co., Ltd.SIHM-
A943-0.1 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR 9272M-6.0
Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR 9272N-6.0 (N-Version)
Photoresist; Shin-Etsu Chemical Co., Inc. SIPR 9361L2M-2.0 Photoresist;
Shin-Etsu Chemical Co., Ltd. SIPR 9361M-2.5 Photoresist; Shin-Etsu
Chemical Co., Inc. SIPR 9684HM-2.5 Photoresist; Shin-Etsu Chemical Co.,
Inc. SIPR 9740M-1.0 Photoresist; Shin-Etsu Chemical Co., Inc. SIPR
9770M-3.0 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR-9361L2N-2.0
Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR-9361N-2.5 Photoresist;
Shin-Etsu Chemical Co., Ltd. SIPR-9684HN-2.5 Photoresist; Shin-Etsu
Chemical Co., Ltd. SIPR-9740N-1.0 Photoresist; Shin-Etsu Chemical Co.,
Ltd. SIPR-9770N-3.0 Photoresist; Shin-Etsu Chemical Co., Inc. SIPR-PR-
1Adhesion Promoting (PR1); Sumitomo Chemical Co., Ltd.
SUMIRESIST[supreg] PFI-38 series Photoresist; Tokyo Ohka Kogyo Co.,
Ltd.TARF-P7052 EM Photoresist; Tokyo Ohka Kogyo Co., Ltd. pr
Photoresist; Tokyo Ohka Kogyo Co., Ltd.TDUR-P5107 (5.6cP) Photoresist;
Fujifilm Electronic Materials USA, Inc.TIS193IL-A01 Photoresist; Rohm
and Haas Electronic Materials LLCUV210GS-0.3 Positive DUV Photoresist;
Rohm and Haas Electronic Materials LLCUV210GS-0.4 Positive DUV
Photoresist; Dupont AR 3 GSF-600 DUV Photoresist; Fujifilm Electronic
Materials USA, Inc. Durimide 20-400APhotoresist; Fujifilm Electronic
Materials USA, Inc. Durimide 20-500APhotoresist; Fujifilm Electronic
Materials USA, Inc. Durimide 20-1200A Photoresist; and Shin-Etsu
Chemical Co., Ltd MPHP (Microprime HP Primer) Organo-silicon
Hexamethyldisilazane (duty rate ranges from duty-free to 5.3%).
The request indicates that certain materials/components are subject
to duties under section 301 of the Trade Act of 1974 (section 301),
depending on the country of origin. The applicable section 301 decision
requires subject merchandise to be admitted to FTZs in privileged
foreign status (19 CFR 146.41).
Public comment is invited from interested parties. Submissions
shall be addressed to the Board's Executive Secretary and sent to:
<a href="/cdn-cgi/l/email-protection#b1d7c5cbf1c5c3d0d5d49fd6dec7"><span class="__cf_email__" data-cfemail="99ffede3d9edebf8fdfcb7fef6ef">[email protected]</span></a>. The closing period for their receipt is September 15,
2026.
[[Page 50753]]
A copy of the notification will be available for public inspection
in the ``Online FTZ Information System'' section of the Board's
website.
For further information, contact John Frye at <a href="/cdn-cgi/l/email-protection#3e7451565010784c475b7e4a4c5f5a5b10595148"><span class="__cf_email__" data-cfemail="e9a3868187c7af9b908ca99d9b888d8cc78e869f">[email protected]</span></a>.
Dated: July 31, 2026.
Elizabeth Whiteman,
Executive Secretary.
[FR Doc. 2026-15937 Filed 8-5-26; 8:45 am]
BILLING CODE 3510-DS-P
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</html>Indexed from Federal Register on August 6, 2026.
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