Notice2025-13786
Foreign-Trade Zone (FTZ) 45, Notification of Proposed Production Activity; Intel Foundry Corporation; (Semiconductor Products); Aloha and Hillsboro, Oregon
Primary source
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Published
July 22, 2025
Issuing agencies
Commerce DepartmentForeign-Trade Zones Board
Full Text
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<title>Federal Register, Volume 90 Issue 138 (Tuesday, July 22, 2025)</title>
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[Federal Register Volume 90, Number 138 (Tuesday, July 22, 2025)]
[Notices]
[Pages 34414-34415]
From the Federal Register Online via the Government Publishing Office [<a href="http://www.gpo.gov">www.gpo.gov</a>]
[FR Doc No: 2025-13786]
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DEPARTMENT OF COMMERCE
Foreign-Trade Zones Board
[B-37-2025]
Foreign-Trade Zone (FTZ) 45, Notification of Proposed Production
Activity; Intel Foundry Corporation; (Semiconductor Products); Aloha
and Hillsboro, Oregon
Intel Foundry Corporation submitted a notification of proposed
production activity to the FTZ Board (the Board) for its facilities in
Aloha and Hillsboro, Oregon within FTZ 45. The notification conforming
to the requirements of the Board's regulations (15 CFR 400.22) was
received on July 11, 2025.
Pursuant to 15 CFR 400.14(b), FTZ production activity would be
limited to the specific foreign-status material(s)/component(s) and
specific finished product(s) described in the submitted notification
(summarized below) and subsequently authorized by the Board. The
benefits that may stem from conducting production activity under FTZ
procedures are explained in the background section of the Board's
website--accessible via <a href="http://www.trade.gov/ftz">www.trade.gov/ftz</a>.
The proposed finished products include: semiconductor transducers;
electronic integrated circuit processors and controllers; electronic
integrated circuit memories; electronic integrated circuit amplifiers;
electronic integrated circuits; printed circuits; and, photomasks
(duty-free).
The proposed foreign-status materials/components include: magnesium
oxide; propane; methane; chlorine; corundum; oxygen; argon; acetylene
gas; helium; xenon; liquid nitrogen; nitrogen; compressed oxygen;
hydrogen; silicon; phosphorous; hydrochloric acid; fluorine gas
mixture; sulfuric acid; nitric acid; phosphoric acid; phosphoric acid
based solution; hydrofluoric acid; xenon and hydrogen mixture; hydrogen
bromide; carbon dioxide; acid solution; silica; carbon monoxide; sulfur
dioxide; nitric oxide; nitrogen dioxide; nitrous oxide; boron
trichloride; silicon tetrachloride; chlorine trifluoride; diiodosilane;
silicon tetrafluoride; nitrogen trifluoride; anyhdrous ammonia;
ammonia; silicon dioxide; sodium hydroxide; potassium hydroxide;
aluminum compound; aluminum oxide mix; antimony oxide; hafnium(IV)
oxide; ammonium fluoride; sulfur hexafluoride; tungsten hexafluoride;
gallium compound; germanium tetrachloride; metal chloride; zinc
chloride; titanium tetrachloride; metal halide; sodium hypochlorite;
copper sulfate solution; copper sulfate; cobalt sulfate; silicate
reagent; borane compound; deuterium; cerium oxide/water dispersion;
hydrogen peroxide; silicon carbide; arsine dopant gas; disilane;
germane; silane; germane containing gas; carbonyl sulfide;
dichlorosilane; phosphine of copper; hexane; octane; ethylene;
alkylacetylene; ethyne also known as acetylene; hydrocarbon deposition
solution; toluene; dichloromethane; trans-dichloroethylene; CHF3
(trifluoromethane); difluoromethane; methyl fluoride; perfluoro;
perfluorocyclobutane; halocarbon-14 (tetraflouromethane); hexafluoro-
1,3-butadiene; halocarbon-318 (Octafluorocyclobutane); methyl isobutyl
carbinol solution; methanol; isopropyl alcohol; tert-butyl alcohol;
distillates, fatty alcohol; 4-Methylpentan-2-ol; 1,2-Propanediol;
dipropylene glycol; 1-methoxy-2-propanol; naphthalene;
hexachlorodisilane; acetone; 2-heptanone; cyclohexanone;
cyclopentanone; formic acid; acetic acid; acetate; sodium acetate;
butyl acetate; anhydride compound; zinc naphthenates; citric acid;
dimethylamine; amine; tetrakis (methylethylamino) zirconium (TEMAZr);
diethylenetriamine; triethanolamine based solution; N-
methylethanolamine solution; tetrameethylammonium hydroxide developer
solution; acetonitrile; N,N-diethylhydroxylamine; organic sulfide;
metal alkyl; proprietary alkoxysilane; bis (dieethylamino) silane;
silicon containing organic precursor; tetramethylsilane;
trimethylaluminum; trimethylsilane; hexamethyldisilazane photoresist;
N.N-bis91-methylethyl) silanamine; gamma-butyrolactone, anisole;
pyridine; 1,2,4-Triazole; azole compound; azoles; ascorbic acid; 1-
methyl-2-pyrrolidone; potassium chloride based solution; potassium
chloride electrode filling solution; 2-propanol, 1-methoxy, 2-aceetate
based undercoat material; detergent; benzotriazole based cleaning
solution; polyglycerol polymer based slurry; surfactant solution;
copper cleaning solution; dicing aid, detergent, lubricant and coolant-
water and surfactants; dicing fluid--dicing aid and detergent; dimethyl
sulfoxide based cleaning solvent; ethanolamine based wafer cleaning
solution; butoxyethanol based wafer cleaning solution;
hydroxyethanediphsphonic acid-based wafer cleaning solution; cutting
oil; organic based cutting fluid; isoparaffinic polyalphaolefin; oil
based lubrication; thermal paste; lubricating preparations; poly
(ethylene glycol); acetic acid based slurry; amorphous silica based
slurry; cerium dioxide based slurry; cerium hydroxide based slurry;
chemical mechanical planarization slurry; potassium hydroxide based
slurry; silica and phosphoric acid-based slurry; tetraethylammonium
hydroxide-based slurry; polymer based adhesive; catalase; mask blanks;
anti-reflective photoresist chemical coating; overcoat material for
photoresist application; photoresist; photoresist stripper; methyl 2-
hydroxyisobutyrate based photoresist solution; photoresist chemical
mixtures; propylene glycol monomethyl ether acetate based photoresist
solution; activated carbon; alpha paste flux; solder flux; flux off;
soldering, brazing or welding powder; corrosion inhibitor; corrosive
solvent; wafers; antifreeze; coolant; alkyl alcohol; diborane gas; 4-
morpholinecarbaldehyde based solution; acetic acid based solution; blue
colloidal silica suspension 0.05[mu]m; cobalt based solution; ethylene
glycol; tetrahydrothiophene-1, 1-dioxide based solution; plating
chemical; calibration gases--diluted helium/hydrogen; solvent thinner;
antistatic; copper plating solution; copper sulfate plating organics;
diborane and argon mixture; diborane and hydrogen mixture; dopant gas;
electrolyte; ethyl acetoacetate/acrylic Polymer; dust-off; fluorine and
nitrogen mixture; helium and nitrogen mixture; helium based compressed
gas mixture; hydrogen and argon mixture; hydrogen and helium mixture;
hydrogen and nitrogen mixture; isobutyl propionate based developer
solution; methane and argon mixture; oxygen and helium mixture; xenon
difluoride; Teflon; acrylic based resin; epoxy molding electrically
stable chemical; epoxy; epoxy molding electrically stable compound;
polyethylene terephthalate; melamine resin; ion exchange resin; ion
exchanger; plastic filament; nylon; acrylic die attach film; adhesive
tape; adhesive film; plastic case for semiconductor wafers; ethylene
bags for packing; plastic packing; plastic bottles; butyrolactone;
glass, quartz; articles of glass, quartz reactor tubes; polycrystalline
diamond suspension; diamond slurry; silver compound; gold; platinum;
iridium; fasteners; copper anode; copper; copper balls; copper/
manganese target; copper danglers; tungsten containing compounds;
molybdenum; tantalum powder; cobalt/iron; bismuth containing compounds;
metal target (titanium); titanium containing compound; chromium;
gallium; copper/manganese target; solder wire; central processing unit
cooler; cooling fans; purifying machine
[[Page 34415]]
for oil separation; desiccant cartridges; storage units; aluminum
target; copper sputtering target; copper target; copper/aluminum
target; cobalt sputtering target; gadolinium sputter target; power
adapters; power supplies; copper lugs; telecommunication connectors;
tantalum sputtering target; titanium sputtering target; communications
acid cables; electrical conductor for telecommunication; fitted
electric conductors; power cables; copper electrical conductors;
insulated electrical conductor; perfluoropolyether-lubricant; and,
methanesulfonic acid (duty rate ranges from duty-free to 15%). The
request indicates that certain materials/components are subject to
duties under section 1702(a)(1)(B) of the International Emergency
Economic Powers Act (section 1702), section 232 of the Trade Expansion
Act of 1962 (section 232) and section 301 of the Trade Act of 1974
(section 301), depending on the country of origin. The applicable
section 1702, section 232 and section 301 decisions require subject
merchandise to be admitted to FTZs in privileged foreign status (19 CFR
146.41).
Public comment is invited from interested parties. Submissions
shall be addressed to the Board's Executive Secretary and sent to:
<a href="/cdn-cgi/l/email-protection#036577794377716267662d646c75"><span class="__cf_email__" data-cfemail="cea8bab48ebabcafaaabe0a9a1b8">[email protected]</span></a>. The closing period for their receipt is September 2,
2025.
A copy of the notification will be available for public inspection
in the ``Online FTZ Information System'' section of the Board's
website.
For further information, contact Christopher Wedderburn at
<a href="/cdn-cgi/l/email-protection#4003283229336e1725242425322235322e0034322124256e272f36"><span class="__cf_email__" data-cfemail="f7b49f859e84d9a0929393928595828599b78385969392d9909881">[email protected]</span></a>.
Dated: July 17, 2025.
Camille R. Evans,
Acting Executive Secretary.
[FR Doc. 2025-13786 Filed 7-21-25; 8:45 am]
BILLING CODE 3510-DS-P
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</html>Indexed from Federal Register on July 22, 2025.
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